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Product Detailed Parameters
- Description：MOSFET BVDSS: 25V~30V SOT23 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：3.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：70mOhm @ 3.8A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：7.5 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：366 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：800mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The DMP3096L-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (V_DSS) of -30 V and a maximum continuous drain current (I_D) of -3.4 A at +25°C. The device offers a typical on-resistance (R_DS(ON)) of 70 mΩ at V_GS = -10 V and 130 mΩ at V_GS = -4.5 V. Packaged in an SOT-23 surface-mount housing, it supports a junction temperature range from -55°C to +150°C.
Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management applications.
- Features low gate threshold voltage and low input capacitance to facilitate fast switching speeds.
- Constructed with totally lead-free materials that are fully RoHS compliant and free of halogens and antimony.
Applications
- Load switches
- Power management functions
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the required tape and reel packing quantity of 10,000 units as defined in the manufacturer's documentation. Confirm that the component meets all applicable environmental directives, including RoHS 2 and RoHS 3 compliance standards, before finalizing procurement specifications.
Selection Notes
Select this component when a P-channel MOSFET with a -30 V breakdown voltage and compact SOT-23 packaging is required. Ensure the application gate drive voltage aligns with the specified R_DS(ON) characteristics at either -4.5 V or -10 V. Verify thermal dissipation requirements against the provided junction-to-ambient thermal resistance values for the target PCB layout.
Part Context
This part belongs to the DMP3096L series of P-channel enhancement mode MOSFETs produced by Diodes Incorporated. The product line focuses on providing low on-resistance and fast switching capabilities within small surface-mount packages suitable for portable and space-constrained electronic designs.
Replacement Considerations
Consult the official datasheet for equivalent circuit diagrams and pin configurations when evaluating potential substitutes. Cross-reference electrical parameters such as drain-source voltage, on-resistance, and package dimensions to ensure compatibility with existing board layouts and system requirements.
FAQ
What is the maximum continuous drain current rating?
The maximum continuous drain current is -3.4 A at an ambient temperature of +25°C.
Is the device suitable for automotive applications?
For automotive applications requiring specific change control or qualification to standards like AEC-Q100/101/104/200, customers must contact Diodes Incorporated directly.
