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Product Detailed Parameters
- Description：MOSFET BVDSS: 25V~30V SOT23 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：3.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：70mOhm @ 3.8A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：7.5 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：366 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：800mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The DMP3096L-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (BVDSS) of -30V and a maximum continuous drain current (ID) of -3.4A at +25°C. The device offers low on-state resistance, specified as 70mΩ max at VGS = -10V and 130mΩ max at VGS = -4.5V. It operates within a junction temperature range of -55°C to +150°C and is housed in an SOT-23 package.
Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management applications.
- Features low gate threshold voltage and low input capacitance to support fast switching speeds.
- Exhibits low input/output leakage characteristics.
- Totally lead-free and fully RoHS compliant; halogen and antimony free.
Applications
- Load switches
- Power management functions
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm that the component meets all applicable environmental directives, including RoHS 2 and RoHS 3 compliance standards. Ensure the selected part matches the required thermal and electrical specifications for the intended circuit design before finalizing procurement.
Selection Notes
Select this component based on its -30V breakdown voltage and -3.4A continuous current rating. Evaluate the on-resistance requirements against the available gate drive voltages (-10V or -4.5V). Consider the thermal resistance values and power dissipation limits relative to the expected operating environment and PCB layout constraints.
Part Context
This component belongs to the DMP3096L series of P-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed for surface-mount assembly using the SOT-23 package. The product line targets applications requiring efficient power switching with minimal conduction losses.
Replacement Considerations
Consult official manufacturer documentation for verified substitute part numbers. Cross-reference electrical parameters such as BVDSS, ID, and RDS(ON) to ensure compatibility with existing circuit designs.
FAQ
What is the maximum continuous drain current for the DMP3096L?
The maximum continuous drain current is -3.4A at a case temperature of +25°C.
Is the DMP3096L suitable for automotive applications?
For automotive applications requiring specific change control, parts qualified to AEC-Q100/101/104/200, PPAP capability, and manufacturing in IATF 16949 certified facilities, contact Diodes Incorporated directly.
