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Product Detailed Parameters
- Description：MOSFET BVDSS: 25V~30V SOT23 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：3.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：65mOhm @ 3.8A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：13.4 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：563 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The DMP3097L-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated in an SOT-23 package. It features a drain-source voltage (V_DSS) of -30 V and a gate-source voltage (V_GSS) of ±20 V. The device supports a continuous drain current (I_D) of -3.9 A at +25°C, with a maximum on-resistance (R_DS(ON)) of 65 mΩ at V_GS = -10 V and 99 mΩ at V_GS = -4.5 V. Total power dissipation is rated at 1.0 W to 1.52 W depending on mounting conditions, with a junction temperature range of -55°C to +150°C.
Feature Summary
- Designed for high-efficiency power management applications through minimized on-state resistance while maintaining superior switching performance.
- Features low gate threshold voltage and low input capacitance to facilitate efficient drive requirements.
- Provides fast switching speed and low input/output leakage characteristics.
Applications
- Backlighting
- Power Management Functions
- DC-DC Converters
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging details. The standard tape and reel configuration contains 3000 units per reel. Confirm compliance with RoHS directives and lead-free status as specified in the manufacturer's quality definitions before procurement.
Selection Notes
Select this component for circuits requiring a -30 V P-channel MOSFET with low R_DS(ON). Ensure the gate drive voltage meets the minimum threshold for the required current load. Verify thermal management capabilities align with the specified junction-to-ambient thermal resistance values under expected operating conditions.
Part Context
This part belongs to the DMP3099 series of P-channel enhancement mode MOSFETs from Diodes Incorporated. These devices are engineered to minimize on-state resistance while preserving switching performance. The product line targets general-purpose power management solutions within compact surface-mount packages.
Replacement Considerations
Consult official datasheets for equivalent parts such as the DMP3099L-7. Verify that substitute components match the -30 V rating, SOT-23 footprint, and electrical characteristics like R_DS(ON) and I_D limits.
FAQ
What is the maximum pulsed drain current for the DMP3097L?
The maximum pulsed drain current (I_DM) is -20 A, measured with a 10μs pulse duration and a duty cycle of 1%.
How does the gate threshold voltage vary with temperature?
The gate threshold voltage (V_GS(TH)) exhibits negative temperature dependence, decreasing as the junction temperature increases from -55°C to +150°C.
