DMP3097LQ-13

$0.10

Description：MOSFET BVDSS: 25V~30V SOT23 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:7fc7792a337d Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 25V~30V SOT23 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：3.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：65mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id：2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：13.4 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：563 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1W
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMP3097LQ-13

Overview

The DMP3097LQ-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated in an SOT-23 package. It features a drain-source voltage (V_DSS) of -30 V and a gate-source voltage (V_GSS) of ±20 V. The device provides a maximum on-resistance (R_DS(ON)) of 65 mΩ at V_GS = -10 V with a continuous drain current (I_D) of -3.9 A, or 99 mΩ at V_GS = -4.5 V with I_D of -3.2 A. Key dynamic parameters include a total gate charge (Q_g) of 6.6 nC at V_GS = -4.5 V and 13.4 nC at V_GS = -10 V. Operating temperatures range from -55 °C to +150 °C.

Feature Summary

Low gate threshold voltage for efficient drive compatibility
Low input capacitance supporting fast switching speeds
Low input/output leakage currents
AEC-Q101 qualified for automotive applications

Applications

Backlighting circuits
Power management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10000-unit tape and reel packaging configuration. Confirm that the component meets RoHS, lead-free, halogen-free, and antimony-free requirements as specified in the manufacturer's documentation. Ensure the application environment remains within the rated thermal and electrical limits defined in the datasheet.

Selection Notes

Select this component when a compact single-channel P-channel switch is required for low-voltage power paths. The low R_DS(ON) minimizes conduction losses, while the small SOT-23 footprint suits space-constrained designs. Consider the gate threshold characteristics if driving directly from lower voltage logic levels.

Part Context

This part belongs to the DMP3097LQ series of P-channel enhancement mode MOSFETs. It is designed to minimize on-state resistance while maintaining superior switching performance. The product line targets high-efficiency power management applications requiring reliable operation in automotive environments.