DMP3098LSD-13

$0.60

Description：MOSFET 2P-CH 30V 4.4A 8SO
Series：-

SKU:f7bd0859a01e Category: FET, MOSFET Arrays Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET 2P-CH 30V 4.4A 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：4.4A
Rds On (Max) @ Id, Vgs：65mOhm @ 5A, 10V
Vgs(th) (Max) @ Id：2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：7.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：336pF @ 25V
Power - Max：1.8W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SO
Grade：-
Qualification：-

Download product information

DMP3098LSD-13

Overview

The DMP3098LSD-13 is a dual P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of -30V and a continuous drain current of -4.4A at +25°C. The device offers a low on-state resistance of 65mΩ at VGS = -10V and 115mΩ at VGS = -4.5V. Total gate charge is 7.8nC at VGS = -10V. It operates within a temperature range of -55°C to +150°C, with a total power dissipation of 1.8W. The component is housed in an SO-8 package.

Feature Summary

Dual P-channel configuration for integrated circuit design
Low on-state resistance for high efficiency power management
Fast switching speed with low input capacitance
Qualified to AEC-Q101 standards for automotive reliability

Applications

Power Management Functions
Analog Switch
Load Switch
Boost Switch

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the tape and reel packaging format containing 2,500 units per reel. Confirm that the SO-8 case material utilizes green molding compound compliant with halogen and antimony-free requirements. Ensure procurement channels are authorized to maintain product integrity and warranty coverage.

Selection Notes

Select this component when a compact dual P-channel solution is required for load switching or boost applications. The SO-8 package provides a balance between thermal performance and board space efficiency. Verify that the system's gate drive voltage aligns with the specified thresholds for optimal RDS(ON) performance.

Part Context

This part belongs to the DMP3098 series of dual P-channel MOSFETs from Diodes Incorporated. It is designed to minimize on-state resistance while maintaining superior switching performance. The series targets high-efficiency power management applications requiring robust automotive-grade reliability.

Replacement Considerations

Check datasheets for alternative dual P-channel MOSFETs in SO-8 packages. Verify pinout compatibility and ensure replacement parts meet the same -30V rating and thermal characteristics.

FAQ

What is the maximum pulsed drain current for the DMP3098LSD-13?

The maximum pulsed drain current (IDM) is -15A, provided the pulse width is less than or equal to 10µS and the duty cycle is less than or equal to 1%.