DMP3099LQ-13

$0.28

Description：MOSFET P-CH 30V 3.8A SOT23 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:4e35d8f014ee Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 30V 3.8A SOT23 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：3.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：65mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id：2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：11 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：563 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1.08W
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMP3099LQ-13

Overview

The DMP3099LQ-13 is a P-channel enhancement mode MOSFET designed for automotive applications, qualified to AEC-Q101 standards. It features a drain-source voltage of -30V and a continuous drain current of -3.8A at +25°C. The maximum on-resistance is 65mΩ at VGS=-10V and 99mΩ at VGS=-4.5V. Total gate charge is 5.2nC at VGS=-4.5V and 11nC at VGS=-10V. Input capacitance is 563pF. Power dissipation is 1.08W with a thermal resistance of 115°C/W. Operating temperature range is -55°C to +150°C.

Feature Summary

Qualified to AEC-Q101 standards for high reliability in automotive environments
Low gate threshold voltage enabling efficient drive characteristics
Fast switching speed supported by low input capacitance
Totally lead-free and fully RoHS compliant

Applications

Backlighting circuits
Power management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix matches the required packaging quantity. Confirm that the component meets AEC-Q101 qualification requirements if used in automotive designs. Ensure compliance with RoHS and REACH directives as specified in the datasheet. Check for PPAP capability documentation if required by your supply chain standards.

Selection Notes

Select this component for applications requiring a single P-channel MOSFET in an SOT23 package. Consider the 65mΩ on-resistance for efficiency at higher gate voltages. Evaluate the 1.08W power dissipation limit against your thermal design constraints. Verify compatibility with -10V or -4.5V gate drive signals based on required current handling.

Part Context

This part belongs to the DMP3099LQ series from Diodes Incorporated. It is a single N-channel enhancement mode MOSFET packaged in SOT23. The device is specifically engineered for automotive-grade reliability and environmental compliance.