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The DMP3099LQ-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -30V drain-source voltage (BVDSS) and supports a continuous drain current of -3.8A at +25°C ambient temperature. The device offers a maximum on-resistance of 65mΩ at VGS = -10V and 99mΩ at VGS = -4.5V. It operates within a junction temperature range of -55°C to +150°C, with a total power dissipation of 1.08W in an SOT-23 package.
Verify the specific ordering suffix matches the required packaging quantity. Confirm that the component meets the necessary automotive qualification standards if intended for such environments. Ensure the requested part number corresponds exactly to the manufacturer's official catalog listing before finalizing procurement orders.
Select this component when a P-channel MOSFET with a -30V rating and SOT-23 footprint is required. Consider the thermal resistance and power dissipation limits relative to the expected operating conditions. Evaluate the gate threshold voltage requirements against the available control logic levels for optimal switching performance.
This device belongs to the DMP3099LQ series from Diodes Incorporated. It is designed specifically to meet stringent automotive application requirements. The product is PPAP capable and utilizes a molded plastic case with a green molding compound classification.
Consult the manufacturer's datasheet for officially documented equivalent parts or direct replacements. Verify pinout compatibility and electrical specifications before substituting.