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Product Detailed Parameters
- Description：MOSFET P-CH 30V 2.7A SOT23-3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：2.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：100mOhm @ 2.7A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：227 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1.08W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The DMP3100L-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -30V drain-source voltage rating and a continuous drain current of -2.7A at 25°C ambient temperature. The device exhibits a maximum on-resistance of 100mΩ at VGS = -10V and ID = -2.7A, or 170mΩ at VGS = -4.5V and ID = -2.0A. Total power dissipation is rated at 1.08W with a thermal resistance of 115°C/W. It operates within a junction temperature range of -55°C to +150°C and utilizes an SOT-23 package.
Feature Summary
- Low on-resistance for efficient conduction
- Fast switching speed capabilities
- Low input capacitance for reduced drive requirements
- Qualified to AEC-Q101 standards for high reliability
Applications
- Power management circuits
- Load switch applications
- Battery protection systems
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the tape and reel packaging configuration containing 3000 units per reel. Confirm that the component meets RoHS compliance and lead-free design requirements as specified in the manufacturer's documentation. Ensure the application environment remains within the stated thermal and electrical limits defined in the datasheet.
Selection Notes
Select this component when a compact P-channel solution is required for low-voltage switching applications. The SOT-23 package offers space efficiency for surface-mount designs. Consider the gate threshold voltage characteristics to ensure compatibility with the intended logic levels driving the gate terminal.
Part Context
This part belongs to the DMP3100L series of P-channel MOSFETs from Diodes Incorporated. It is designed for general-purpose switching tasks where low on-resistance and fast switching are prioritized. The device is housed in a standard SOT-23 case material made of molded plastic with a flammability rating of 94V-0.
Replacement Considerations
Check for direct substitutes within the same product family or similar packages from other manufacturers. Verify that any replacement maintains equivalent voltage ratings, current handling capabilities, and thermal performance characteristics.
FAQ
What is the maximum pulsed drain current for the DMP3100L-7?
The maximum pulsed drain current (IDM) is rated at -8A, provided the pulse width is less than or equal to 10μS and the duty cycle is less than or equal to 1%.
How does the on-resistance vary with temperature?
The static drain-source on-resistance increases as the ambient temperature rises. Normalized curves indicate higher resistance values at elevated temperatures such as 125°C and 150°C compared to 25°C.
