DMP3120L-7

$0.07

Description：MOSFET P-CH 30V 2.8A SOT-23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:a641256ad795 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 30V 2.8A SOT-23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：120mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id：1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：6.7 nC @ 10 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：285 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.4W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMP3120L-7

Overview

The DMP3120L-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (V_DSS) of -30 V and a continuous drain current (I_D) of -2.8 A at +25°C ambient temperature. The device exhibits low on-resistance, with R_DS(ON) less than 120 mΩ at V_GS = -4.5 V and less than 240 mΩ at V_GS = -2.5 V. Packaged in an SOT-23 case, it operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Low static drain-source on-resistance for efficient power switching
Low gate threshold voltage enabling compatibility with standard logic levels
Fast switching speed supported by low input capacitance
Qualified to AEC-Q101 standards for high reliability applications

Applications

Power management circuits requiring P-channel switching
Battery protection systems utilizing low leakage characteristics
General-purpose load switch applications in consumer electronics

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the tape and reel packaging configuration containing 3000 units per reel. Confirm that the component meets RoHS compliance and is halogen-free as specified in the manufacturer's documentation. Ensure the procurement channel provides valid traceability for the Shanghai or Chengdu assembly sites indicated on the marking code.

Selection Notes

Select this component for designs requiring a compact SOT-23 footprint with moderate current handling capabilities up to 2.8 A. Evaluate the thermal resistance of 90 °C/W against the expected ambient temperature conditions to ensure safe operation. Consider the -30 V breakdown voltage limit when designing circuits with potential voltage spikes exceeding this rating.

Part Context

This part belongs to the DMP31 series of P-channel MOSFETs produced by Diodes Incorporated. The datasheet explicitly states that the DMP3120L is not recommended for new designs and recommends using the DMP3130L as a modern alternative. The device utilizes a molded plastic case material classified as UL 94V-0 flammability rated.