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Product Detailed Parameters
- Description：MOSFET BVDSS: 25V~30V SOT23 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：2.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：122mOhm @ 2.7A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：8.2 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：384.4 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1.08W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The DMP3160LQ-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (V_DSS) of -30V and a steady-state continuous drain current (I_D) of -2.7A at +25°C ambient temperature. The device exhibits a maximum static drain-source on-resistance (R_DS(ON)) of 122mΩ at V_GS = -10V and 190mΩ at V_GS = -4.5V. It operates within an ambient temperature range of -55°C to +150°C junction temperature, with a total power dissipation of 1.08W in a surface-mount SOT23 package.
Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
- Totally lead-free and fully RoHS compliant, ensuring compliance with environmental directives.
- Manufactured as a halogen and antimony free "Green" device.
Applications
- DC-DC converters
- Power management functions
Procurement Notes
Verify the specific Q suffix against official manufacturer documentation to confirm automotive qualification status. Ensure the ordering part number matches the exact tape and reel quantity specified in the datasheet. Confirm that the component meets all applicable regulatory standards required for the target deployment environment before finalizing procurement.
Selection Notes
Select this component when a compact SOT23 footprint is required for low-voltage power switching. Evaluate the R_DS(ON) values at the intended gate drive voltage to ensure adequate conduction efficiency. Consider the thermal resistance characteristics and maximum power dissipation limits relative to the expected operating ambient temperature and PCB layout conditions.
Part Context
This component belongs to the DMP series of P-channel enhancement mode MOSFETs from Diodes Incorporated. These devices are engineered for general-purpose power switching tasks where space constraints and energy efficiency are critical design parameters. The product line emphasizes low on-resistance and fast switching capabilities suitable for modern electronic systems.
Replacement Considerations
Consult official manufacturer substitution guides or contact Diodes Incorporated directly for verified equivalent parts. Do not assume cross-compatibility based solely on package type or nominal voltage ratings without verifying electrical parameter alignment.
FAQ
What is the maximum pulsed drain current for the DMP3160L?
The maximum pulsed drain current (I_DM) is rated at -8A, provided the pulse width is less than or equal to 10µs and the duty cycle does not exceed 1%.
How does the gate threshold voltage vary with temperature?
The gate threshold voltage (V_GS(TH)) typically ranges from -1.3V to -2.1V at +25°C. Graphical data indicates that the threshold voltage decreases as the ambient temperature increases from -55°C to +150°C.
