DMP3164LVT-7

DMP3164LVT-7

$0.51
  • Description:MOSFET 2P-CH 2.8A TSOT26
  • Series:-

SKU:b9bf62f456b7 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:MOSFET 2P-CH 2.8A TSOT26
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):-
  • Current - Continuous Drain (Id) @ 25°C:2.8A (Ta)
  • Rds On (Max) @ Id, Vgs:95mOhm @ 2.7A, 10V
  • Vgs(th) (Max) @ Id:2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • Power - Max:-
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package:TSOT-26
  • Grade:-
  • Qualification:-

Download product information

DMP3164LVT-7

Overview

The DMP3164LVT-7 is a dual P-channel enhancement mode MOSFET manufactured by Diodes Incorporated in a TSOT26 package. It features a drain-source voltage (BVDSS) of -30V and a continuous drain current (ID) of -2.8A at +25°C. The static drain-source on-resistance (RDS(ON)) is specified as 95mΩ at VGS = -10V and 140mΩ at VGS = -4.5V. Key electrical characteristics include a gate threshold voltage range of -0.7V to -2.1V, total gate charge of 4.4nC at VGS = -4.5V, and input capacitance of 324pF. The device operates within a junction temperature range of -55°C to +150°C.

Feature Summary

  • Dual P-channel configuration designed for high efficiency power management applications
  • Optimized low on-state resistance while maintaining superior switching performance
  • Low input/output leakage and fast switching speed capabilities
  • Totally lead-free and fully RoHS compliant with halogen and antimony free construction

Applications

  • Backlighting circuits
  • DC-DC converters
  • Power management functions

Procurement Notes

Verify the specific ordering suffix (-7 or -13) against project requirements to confirm the correct tape and reel packaging quantity. Confirm that the TSOT26 mechanical dimensions and pad layout align with the PCB design guidelines provided in the datasheet. Ensure compliance with the stated moisture sensitivity level and storage temperature limits during handling.

Selection Notes

Select this component when a compact dual P-channel solution is required for low voltage power switching. Evaluate the RDS(ON) values at the actual operating gate drive voltage to ensure thermal performance meets system constraints. Consider the thermal resistance parameters and available copper area on the PCB for adequate heat dissipation under steady-state conditions.

Part Context

This part belongs to the DMP series of dual P-channel MOSFETs from Diodes Incorporated. It utilizes a TSOT26 surface-mount package suitable for space-constrained designs. The device is intended for general-purpose power switching tasks where low conduction losses and fast transient response are critical for overall system efficiency.

Replacement Considerations

Check for direct pin-compatible alternatives within the same manufacturer's portfolio that offer similar BVDSS and ID ratings. Verify that any substitute maintains the same TSOT26 footprint and electrical characteristics, particularly RDS(ON) at the target VGS levels.

FAQ

What is the maximum continuous drain current for the DMP3164LVT?

The maximum continuous drain current is -2.8A at an ambient temperature of +25°C and reduces to -2.2A at +70°C.

Does the DMP3164LVT support automotive grade applications?

The standard DMP3164LVT datasheet does not specify AEC-Q101 qualification or automotive reliability standards; it is designated for general commercial use.

What is the typical gate threshold voltage range?

The gate threshold voltage (VGS(TH)) ranges from a minimum of -0.7V to a maximum of -2.1V when tested at ID = -250μA.

DMP3164LVT-7DMP3164LVT-7
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