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Product Detailed Parameters
- Description：MOSFET P-CH 30V 3.3A SOT23 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：3.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：90mOhm @ 2.7A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：2 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：300 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：800mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The DMP3165L-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -30V drain-source voltage rating and a maximum continuous drain current of -3.3A at +25°C. The device offers a low on-state resistance of 90mΩ at VGS = -10V and 134mΩ at VGS = -4.5V. It operates within a junction temperature range of -55°C to +150°C and utilizes an SOT-23 surface-mount package.
Feature Summary
- Low on-resistance for high efficiency power management
- Fast switching speed with low input capacitance
- Totally lead-free, fully RoHS compliant, and halogen/antimony free
Applications
- DC-DC Converters
- Power Management Functions
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging details. The DMP3165L-7 variant is supplied in tape and reel packaging containing 3000 units per reel. Confirm that the component meets all applicable environmental directives before final integration into the design.
Selection Notes
Select this component when a compact P-channel MOSFET with low on-resistance is required for efficient power switching applications. Ensure the gate drive voltage aligns with the specified thresholds for optimal RDS(ON) performance. Verify thermal dissipation requirements against the provided thermal resistance data for the target PCB layout.
Part Context
This part belongs to the DMP3165L series of P-channel enhancement mode MOSFETs from Diodes Incorporated. The series is engineered to minimize on-state resistance while maintaining superior switching performance. These devices are designed specifically for high-efficiency power management applications requiring small form factors.
Replacement Considerations
Consult official manufacturer substitution guides for verified alternatives. Cross-referencing parameters such as BVDSS, ID, and RDS(ON) is essential when evaluating potential replacement components for this specific part number.
