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Product Detailed Parameters
- Description：MOSFET BVDSS: 25V~30V SOT23 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：620mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：1Ohm @ 400mA, 4.5V
- Vgs(th) (Max) @ Id：1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.6 nC @ 8 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：54 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：460mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The DMP31D1U-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated in an SOT23 package. It features a drain-source voltage of -30V and a continuous drain current of -0.62A at +25°C. The device offers low on-resistance, specified as 1Ω max at VGS = -4.5V and ID = -400mA, and 2Ω max at VGS = -1.8V and ID = -100mA. Total gate charge is 1.6nC max at VGS = -8V. It operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Low gate threshold voltage for efficient drive capability
- Fast switching speed with minimized total gate charge
- ESD protected gate structure
Applications
- Load switches in portable electronics
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packing quantity of 3,000 units as documented in the manufacturer's ordering information. Confirm that the component meets RoHS 3 compliance and Halogen-free requirements if mandated by your design specifications. Ensure the selected variant matches the required packaging carrier type for your assembly line equipment.
Selection Notes
Select this component when designing circuits requiring a compact P-channel switch with a 30V rating. Evaluate the thermal resistance of 274°C/W under minimum pad layout conditions against your system's power dissipation limits. Consider the low gate charge characteristics for applications prioritizing fast switching transitions and reduced driver power consumption.
Part Context
This part belongs to the DMP series of P-channel enhancement mode MOSFETs from Diodes Incorporated. These devices are engineered to minimize on-state resistance while maintaining superior switching performance. The series targets high-efficiency power management applications where small form factors and reliable operation are critical.
Replacement Considerations
Consult official Diodes documentation for verified equivalent part numbers. Cross-reference electrical parameters such as BVDSS, RDS(ON), and package dimensions before substitution.
