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Product Detailed Parameters
- Description：MOSFET 2P-CH 30V 0.55A SOT363
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：550mA (Ta)
- Rds On (Max) @ Id, Vgs：1Ohm @ 400mA, 4.5V
- Vgs(th) (Max) @ Id：1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：54pF @ 15V
- Power - Max：370mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363
- Grade：-
- Qualification：-
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Overview
The DMP31D1UDW-13 is a dual P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates two independent P-channel transistors within a compact SOT-363 surface-mount package. The device features a drain-source voltage rating of 30V and a continuous drain current capacity of 250mA per channel. Key electrical characteristics include a maximum on-resistance of 1.4 ohms at a gate-source voltage of -4.5V, with a gate threshold voltage ranging from 0.4V to 1V. The component operates reliably across an extended temperature range from -55°C to +150°C junction temperature.
Feature Summary
- Dual configuration integrating two independent P-channel MOSFETs in a single compact package for space-constrained designs.
- Enhancement mode operation optimized for low-voltage logic interface compatibility.
- High thermal stability supporting reliable performance across wide industrial temperature ranges.
Applications
- Low-side switching applications in portable consumer electronics
- Load switch circuits for battery-powered devices
- General-purpose signal routing in mobile communication equipment
Procurement Notes
Verify the specific suffix against official Diodes Incorporated documentation to confirm pinout and electrical tolerances. Ensure the procurement source provides valid RoHS compliance certificates. Cross-reference the manufacturer part number with authorized distributor databases to validate authenticity and traceability before finalizing orders.
Selection Notes
Select this component when dual isolated P-channel switching is required in minimal footprint designs. Evaluate the 1.4-ohm on-resistance against total load current requirements to ensure acceptable power dissipation. Confirm that the 30V breakdown voltage exceeds the maximum circuit supply voltage with adequate safety margin.
Part Context
This component belongs to Diodes Incorporated's portfolio of small-signal MOSFETs designed for portable electronics. The SOT-363 packaging allows for high-density board layouts. It serves as a discrete alternative to integrated power management solutions where individual channel control is necessary.
Replacement Considerations
Consult official cross-reference lists for verified substitutes. Ensure any replacement maintains identical pinout configurations and meets or exceeds the original 30V voltage rating and current handling capabilities.
