DMP31D1UFB4-7B

$0.03

Description：MOSFET BVDSS: 8V~24V X2-DFN1006-
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:c4bb8d876736 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 8V~24V X2-DFN1006-
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：900mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：1Ohm @ 400mA, 4.5V
Vgs(th) (Max) @ Id：1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：1.6 nC @ 8 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：54 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：500mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：X2-DFN1006-3
Package / Case：3-XFDFN

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DMP31D1UFB4-7B

Overview

The DMP31D1UFB4-7B is a single-channel P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (V_DSS) of -30V and a continuous drain current (I_D) of -0.9A at +25°C. The device utilizes an X2-DFN1006-3 package with a footprint of 0.6mm² and a profile height of 0.4mm. Static drain-source on-resistance (R_DS(ON)) is specified as 1Ω at V_GS = -4.5V, 1.5Ω at V_GS = -2.5V, and 2Ω at V_GS = -1.8V. Total gate charge (Q_g) is 1.0nC at V_GS = -4.5V and 1.6nC at V_GS = -8V.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management.
Features a low-profile 0.4mm package with a footprint thirteen times smaller than SOT23.
Includes an internal ESD protected gate structure.
Compliant with RoHS directives and defined as a Halogen- and Antimony-free "Green" device.

Applications

Load switches in portable electronics
High-efficiency power-management applications

Procurement Notes

Verify the specific ordering suffix '-7B' against official Diodes Incorporated documentation to confirm reel size and packing quantity details. Ensure that the required packaging format aligns with automated assembly equipment specifications before finalizing procurement orders.

Selection Notes

Select this component when space constraints require a footprint significantly smaller than standard SOT23 packages. Evaluate the thermal resistance characteristics relative to the target PCB copper area, as junction-to-ambient thermal performance varies based on the mounting substrate configuration.

Part Context

This part belongs to the DMP series of P-channel MOSFETs from Diodes Incorporated. It is designed for low-voltage, low-current switching tasks where physical size and power efficiency are critical design parameters.

Replacement Considerations

Consult official manufacturer substitution guides for verified equivalent parts. Do not assume functional interchangeability with other generic P-channel MOSFETs without verifying pinout compatibility and electrical parameter limits.