DMP31D1UFB4Q-7B

$0.03

Description：MOSFET BVDSS: 8V~24V X2-DFN1006-
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:4c6a69c54ee1 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 8V~24V X2-DFN1006-
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：900mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：1Ohm @ 400mA, 4.5V
Vgs(th) (Max) @ Id：1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：1.6 nC @ 8 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：54 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：500mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：X2-DFN1006-3
Package / Case：3-XFDFN

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DMP31D1UFB4Q-7B

Overview

The DMP31D1UFB4Q-7B is a P-channel enhancement mode MOSFET from Diodes Incorporated, housed in an X2-DFN1006-3 package. It features a maximum drain-source voltage (BVDSS) of -30V and a continuous drain current (ID) of -0.9A at +25°C. The device offers low on-state resistance (RDS(ON)) of 1Ω at VGS = -4.5V and -0.4A. It operates within a temperature range of -55°C to +150°C and includes an ESD protected gate with an internal protection diode.

Feature Summary

Designed for high-efficiency power management by minimizing on-state resistance while maintaining superior switching performance.
Features a compact footprint of 0.6mm² and a 0.4mm profile, suitable for low-profile applications.
Includes an ESD protected gate and built-in body diode for robust operation.
Qualified for automotive applications under AEC-Q101 standards and manufactured in IATF 16949 certified facilities.

Applications

Load switches in portable electronics
High-efficiency power-management applications
Automotive electronic systems requiring specific change control

Procurement Notes

Verify the complete part number including the suffix '-7B' to confirm the reel packaging quantity of 10,000 units. Ensure compatibility with RoHS 3 and halogen-free requirements if specified for your project. Confirm that the X2-DFN1006-3 package dimensions align with your PCB layout constraints before finalizing procurement.

Selection Notes

Select this component when a small form factor is critical due to its 0.6mm² footprint. Consider the -30V rating and -0.9A continuous current capability for low-power switching tasks. Verify that the gate threshold voltage characteristics meet your logic level drive requirements. Check thermal resistance values against your expected power dissipation and ambient temperature conditions.

Part Context

This part belongs to the DMP series of P-channel MOSFETs from Diodes Incorporated. It utilizes the X2-DFN1006-3 surface-mount package, which is significantly smaller than traditional SOT-23 packages. The product is designed to support both general consumer electronics and stricter automotive quality standards.

Replacement Considerations

Check datasheets for other Diodes Incorporated P-channel MOSFETs in the X2-DFN1006-3 package with similar -30V ratings. Verify pinout compatibility and electrical parameters such as RDS(ON) and ID before substitution.

FAQ

Is the DMP31D1UFB4Q-7B suitable for automotive applications?

Yes, it is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities, making it suitable for automotive applications requiring specific change control.