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The DMP31D1UQ-7 is a P-channel enhancement mode MOSFET designed for automotive applications. It features a drain-source voltage of -30V and an on-resistance of 1Ω at VGS = -4.5V, supporting a continuous drain current of -0.62A at +25°C. The device operates within a temperature range of -55°C to +150°C and includes internal gate protection diodes.
Verify the component against the official Diodes Incorporated datasheet DS44736 Rev. 3-2. Confirm that the part number suffix matches the requested packing quantity, as the -7 suffix indicates a tape and reel carrier containing 3,000 units. Ensure compliance with RoHS and halogen-free requirements specified by the manufacturer.
Select this component when designing circuits requiring a -30V P-channel MOSFET with robust automotive qualification. The low gate threshold voltage facilitates operation with lower drive voltages, while the SOT23 package provides a compact footprint suitable for space-constrained portable and automotive designs.
This component belongs to the DMP31 series of P-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It is specifically engineered to meet stringent automotive reliability standards, distinguishing it from standard commercial-grade transistors through its AEC-Q101 qualification and IATF16949 certified manufacturing process.
Direct substitutes include the DMP31D1UW-13 and DMP31D1LVQ-7, which share similar electrical characteristics and packaging types within the same product family.