DMP31D1UVTQ-13

$0.06

Description：MOSFET 2P-CH 30V 0.76A TSOT26
Series：-

SKU:91dbb4aafdea Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2P-CH 30V 0.76A TSOT26
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：760mA (Ta)
Rds On (Max) @ Id, Vgs：1Ohm @ 400mA, 4.5V
Vgs(th) (Max) @ Id：1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：1.6nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds：54pF @ 15V
Power - Max：500mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-23-6 Thin, TSOT-23-6
Supplier Device Package：TSOT-26
Grade：Automotive
Qualification：AEC-Q101

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DMP31D1UVTQ-13

Overview

The DMP31D1UVTQ is a dual P-channel enhancement mode MOSFET in a TSOT26 package. It features a drain-source voltage (BVDSS) of -30V and a continuous drain current (ID) of -0.76A at +25°C. The on-resistance (RDS(ON)) is 1000mΩ at VGS = -4.5V and 1500mΩ at VGS = -2.5V. Power dissipation is rated at 0.5W or 0.9W depending on PCB copper area, with a junction-to-ambient thermal resistance of 243°C/W or 143°C/W respectively.

Feature Summary

Dual configuration designed for high-efficiency power-management applications
Optimized to minimize on-state resistance while maintaining superior switching performance
Qualified for automotive applications requiring specific change control under AEC-Q101 standards

Applications

Backlighting circuits
DC-DC converters
Power-management functions

Procurement Notes

Verify the ordering suffix matches the required packing quantity, as the -7 suffix indicates 3,000 units per tape and reel while the -13 suffix indicates 10,000 units. Confirm that the component meets RoHS 3 compliance requirements and ensure the manufacturing facility holds IATF 16949 certification for automotive-grade supply chain integrity.

Selection Notes

Select this component when a compact dual P-channel solution is required for low-voltage power management. The device offers a balance of low on-resistance and fast switching speeds suitable for space-constrained designs. Ensure the gate drive voltage aligns with the specified thresholds for optimal RDS(ON) performance and consider the thermal constraints imposed by the small TSOT26 package.

Part Context

This part belongs to Diodes Incorporated's new generation of MOSFETs engineered to reduce on-state resistance without compromising switching speed. It is manufactured in IATF 16949 certified facilities and is fully lead-free and halogen-free. The device utilizes a molded plastic green molding compound with UL flammability classification rating 94V-0.