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Product Detailed Parameters
- Description：MOSFET 2P-CH 30V 0.76A TSOT26
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：760mA (Ta)
- Rds On (Max) @ Id, Vgs：1Ohm @ 400mA, 4.5V
- Vgs(th) (Max) @ Id：1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.6nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds：54pF @ 15V
- Power - Max：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：TSOT-26
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMP31D1UVTQ is a dual P-channel enhancement mode MOSFET in a TSOT26 package. It features a -30V drain-source voltage (BVDSS) and a maximum continuous drain current of -0.76A at +25°C. The static drain-source on-resistance (RDS(ON)) is 1000mΩ at VGS = -4.5V and 1500mΩ at VGS = -2.5V. The device has a gate-source voltage rating of ±8V, power dissipation of 0.5W to 0.9W depending on mounting, and operates within a temperature range of -55°C to +150°C.
Feature Summary
- Dual P-channel configuration for high-efficiency power management
- Optimized for low on-state resistance and fast switching speed
- Suitable for automotive applications with AEC-Q101 qualification
- Totally lead-free and fully RoHS compliant
Applications
- Backlighting circuits
- DC-DC converters
- Power-management functions
Procurement Notes
Verify the specific ordering suffix (-7 or -13) to confirm the packing quantity and carrier type required for your assembly line. Confirm that the component meets the necessary automotive quality standards if used in regulated environments. Ensure the design accounts for the thermal resistance values provided for different PCB copper areas to maintain safe operating temperatures.
Selection Notes
Select this component when a compact dual P-channel solution is needed for low-voltage power switching. Consider the RDS(ON) specifications at your intended gate drive voltage to ensure adequate current handling. Evaluate the thermal performance based on your PCB layout, as the power dissipation varies significantly between minimum pad layouts and larger copper plates.
Part Context
This part belongs to Diodes Incorporated's new generation MOSFET lineup designed to minimize on-state resistance while maintaining superior switching performance. It is manufactured in IATF 16949 certified facilities and is PPAP capable, making it suitable for strict automotive supply chain requirements.
Replacement Considerations
Check for compatible dual P-channel MOSFETs in the TSOT26 package with similar -30V ratings and comparable RDS(ON) characteristics. Verify pinout compatibility and thermal resistance values before substitution.
FAQ
What is the maximum continuous drain current for the DMP31D1UVTQ?
The maximum continuous drain current is -0.76A at an ambient temperature of +25°C and -0.61A at +70°C.
Is the DMP31D1UVTQ qualified for automotive use?
Yes, the DMP31D1UVTQ is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.
What is the gate threshold voltage range?
The gate threshold voltage (VGS(TH)) ranges from -0.5V to -1.1V when tested with a drain-source voltage equal to the gate-source voltage and a drain current of -250μA.
