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Product Detailed Parameters
- Description：MOSFET BVDSS: 8V~24V SOT323 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：600mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：1Ohm @ 400mA, 4.5V
- Vgs(th) (Max) @ Id：1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.6 nC @ 8 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：54 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：440mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-323
- Package / Case：SC-70, SOT-323
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Overview
The DMP31D1UW is a P-channel enhancement mode MOSFET designed for high-efficiency power management. It features a -30V drain-source voltage rating and a maximum continuous drain current of -0.6A at +25°C. The device offers low on-state resistance, specified as 1Ω max at VGS = -4.5V and 1.5Ω max at VGS = -2.5V. Packaged in an SOT323 surface-mount case, it supports a junction temperature range from -55°C to +150°C.
Feature Summary
- Low on-resistance design minimizes conduction losses while maintaining superior switching performance.
- Low gate threshold voltage enables efficient drive compatibility with various logic levels.
- Integrated ESD protection safeguards the gate terminal against electrostatic discharge events.
Applications
- DC-DC converters
- Load switches
- Power-management functions
Procurement Notes
Verify the specific ordering suffix when purchasing. The '-7' suffix indicates a tape and reel quantity of 3,000 units, while the '-13' suffix corresponds to 10,000 units per reel. Confirm that the required packaging format aligns with your automated assembly equipment specifications before placing orders.
Selection Notes
Select this component for applications requiring compact SOT323 packaging with moderate current handling capabilities. Ensure the operating gate-source voltage remains within the ±8V absolute maximum rating. Evaluate thermal dissipation requirements based on the specific PCB copper area and ambient conditions to maintain safe junction temperatures.
Part Context
This part belongs to Diodes Incorporated's generation of P-channel MOSFETs optimized for minimizing on-state resistance without compromising switching speed. It utilizes a molded plastic package with matte tin annealed terminals over an alloy leadframe, ensuring compliance with RoHS directives and halogen-free standards.
Replacement Considerations
Consult official manufacturer documentation for verified equivalent parts. Cross-referencing requires matching electrical ratings, pin configurations, and thermal characteristics to ensure functional compatibility in existing designs.
