ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET BVDSS: 8V~24V SOT323 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：600mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：1Ohm @ 400mA, 4.5V
- Vgs(th) (Max) @ Id：1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.6 nC @ 8 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：54 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：440mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-323
- Package / Case：SC-70, SOT-323
Download product information
Overview
The DMP31D1UWQ-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -30V drain-source breakdown voltage and a maximum continuous drain current of -0.6A at +25°C. The device offers a low on-state resistance, specified as 1Ω maximum at VGS = -4.5V and ID = -400mA, or 1.5Ω maximum at VGS = -2.5V and ID = -200mA. Packaged in an SOT323 surface-mount case, it operates within a temperature range of -55°C to +150°C.
Feature Summary
- Low on-state resistance for high-efficiency power management
- Low gate threshold voltage enabling easy drive compatibility
- Fast switching speed with low input capacitance
- ESD protected gate structure
Applications
- DC-DC converters
- Load switches
- Power-management functions
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the component meets AEC-Q101 qualification requirements if intended for automotive applications requiring specific change control. Ensure the selected package variant matches the required PCB footprint dimensions for the SOT323 form factor.
Selection Notes
Select this component when a compact P-channel switch is required for low-voltage applications up to 30V. Consider the thermal resistance characteristics and the specific on-resistance values at your operating gate voltage. Evaluate the gate charge parameters against your driver capabilities to ensure adequate switching performance within your system constraints.
Part Context
This part belongs to the DMP series of P-channel MOSFETs from Diodes Incorporated. It utilizes silicon technology and is housed in a molded plastic SOT323 package. The device is lead-free, fully RoHS compliant, and halogen-free. It is designed to minimize on-state resistance while maintaining superior switching performance.
Replacement Considerations
Consult official manufacturer documentation for verified equivalent parts. Cross-referencing requires matching electrical ratings, pin configurations, and package dimensions.
