DMP31D7LFB-7B

DMP31D7LFB-7B

$0.03
  • Description:MOSFET BVDSS: 25V~30V X1-DFN1006
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)

SKU:df230bd9c72b Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:MOSFET BVDSS: 25V~30V X1-DFN1006
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:810mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:900mOhm @ 420mA, 10V
  • Vgs(th) (Max) @ Id:2.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:0.36 nC @ 4.5 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:19 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):530mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:X1-DFN1006-3
  • Package / Case:3-UFDFN

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DMP31D7LFB-7B

Overview

The DMP31D7LFB-7B is a P-channel enhancement mode MOSFET from Diodes Incorporated, housed in an X1-DFN1006-3 package. It features a drain-source voltage (V_DSS) of -30V and a continuous drain current (I_D) of -0.81A at +25°C. The device offers low on-state resistance (R_DS(ON)) of 0.9Ω at V_GS = -10V and 1.7Ω at V_GS = -4.5V. Key electrical parameters include a gate threshold voltage (V_GS(TH)) ranging from -1V to -2.6V, total gate charge (Q_g) of 0.36nC at V_GS = -4.5V, and input capacitance (C_iss) of 19pF. Operating temperature ranges from -55°C to +150°C.

Feature Summary

  • Minimized on-state resistance combined with superior switching performance for high-efficiency power management.
  • Significantly reduced footprint compared to traditional SOT23 packages.
  • Low gate threshold voltage enabling efficient drive characteristics.
  • Integrated ESD protection on the gate terminal.

Applications

  • Load Switch
  • High-efficiency power management applications

Procurement Notes

Verify the specific ordering suffix '-7B' against official Diodes Incorporated documentation to confirm packaging details, specifically the 10,000-unit reel quantity and tape width specifications. Ensure compliance with RoHS 3 and halogen-free requirements as defined by the manufacturer's quality definitions before finalizing procurement orders.

Selection Notes

Select this component when space constraints require a footprint significantly smaller than standard SOT23 packages while maintaining reliable switching capabilities. Consider the -30V rating and -0.81A continuous current limits for appropriate load matching. Evaluate the low gate threshold voltage (-1V to -2.6V) suitability for logic-level driving interfaces in compact power management designs.

Part Context

This part belongs to the DMP31 series of P-channel MOSFETs manufactured by Diodes Incorporated. It utilizes the X1-DFN1006-3 surface-mount package, designed for automated assembly. The product is lead-free, fully RoHS compliant, and manufactured using green molding compounds free of halogens and antimony, aligning with environmental standards for modern electronic components.

Replacement Considerations

Consult official Diodes Incorporated cross-reference data or distributor substitution tools for verified equivalent parts. Do not assume functional interchangeability based solely on similar package types or voltage ratings without verifying pinout compatibility and detailed electrical parameter alignment.

FAQ

What is the maximum operating junction temperature for the DMP31D7LFB-7B?

The maximum operating junction temperature (T_J) for this component is +150°C.

How does the package size compare to traditional alternatives?

The X1-DFN1006-3 package provides a footprint that is thirteen times smaller than the standard SOT23 package.

DMP31D7LFB-7BDMP31D7LFB-7B
$0.03
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