DMP31D7LTQ-13

$0.05

Description：MOSFET BVDSS: 25V~30V SOT523 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:c3915b127c9e Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 25V~30V SOT523 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：360mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：900mOhm @ 420mA, 10V
Vgs(th) (Max) @ Id：2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.36 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：19 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：260mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-523
Package / Case：SOT-523

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DMP31D7LTQ-13

Overview

The DMP31D7LTQ-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (V_DSS) of -30 V and a gate-source voltage (V_GSS) rating of ±20 V. The device offers a maximum static drain-source on-resistance (R_DS(ON)) of 0.9 Ω at V_GS = -10 V and 1.7 Ω at V_GS = -4.5 V. Continuous drain current (I_D) is rated at -0.36 A at +25°C, with a pulsed drain current (I_DM) of -2.6 A. Total power dissipation (P_D) is 0.26 W to 0.33 W depending on mounting conditions. Thermal resistance (R_θJA) ranges from 377 °C/W to 488 °C/W. Operating temperature spans -55°C to +150°C.

Feature Summary

Low on-resistance for high-efficiency power management
Low gate threshold voltage enabling easy drive compatibility
Fast switching speed with low input capacitance
ESD protected gate structure

Applications

DC-DC converters
Load switches
Power-management functions

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the component meets automotive quality requirements, specifically AEC-Q101 qualification and PPAP capability, if intended for such environments. Ensure the SOT523 package dimensions align with the target PCB footprint layout constraints.

Selection Notes

Select this component for applications requiring a compact P-channel switch with low on-resistance in the 30V range. Consider the thermal resistance characteristics when designing heat dissipation strategies, as the SOT523 package has limited power handling capabilities. Verify that the gate drive voltage levels are sufficient to achieve the specified low R_DS(ON) values for optimal efficiency.

Part Context

This part belongs to the DMP31 series of P-channel MOSFETs designed for general-purpose switching and power management. It utilizes silicon technology and is housed in an SOT523 surface-mount package. The device is compliant with RoHS directives and is classified as a halogen-free green device, suitable for environmentally conscious manufacturing processes.

Replacement Considerations

Check datasheets for other Diodes Incorporated P-channel MOSFETs in the SOT523 package with similar V_DSS and R_DS(ON) specifications. Ensure any substitute matches the pinout configuration and thermal performance characteristics of the original design.