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Product Detailed Parameters
- Description：MOSFET P-CH 30V 400MA 3DFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：400mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
- Rds On (Max) @ Id, Vgs：2.4Ohm @ 200mA, 10V
- Vgs(th) (Max) @ Id：2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.3 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：51 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：X1-DFN1006-3
- Package / Case：3-UFDFN
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Overview
The DMP32D4SFB-7B is a P-channel enhancement mode MOSFET from Diodes Incorporated, designed for high-efficiency power management. It features a maximum drain-source voltage (V_DSS) of -30V and an ultra-small X1-DFN1006-3 surface-mount package. The device offers low on-state resistance (R_DS(ON)) with a maximum of 2.4Ω at V_GS = -10V and 4Ω at V_GS = -4.5V. Continuous drain current (I_D) reaches -400mA at +25°C ambient temperature. Operating and storage temperatures range from -55°C to +150°C.
Feature Summary
- Ultra-small surface mount package
- ESD protected gate
- Totally lead-free and fully RoHS compliant
Applications
- Load switches
- Portable applications
- Power management functions
Procurement Notes
Verify the specific ordering suffix '-7B' against official Diodes Incorporated documentation to confirm reel size and packing quantity details. Ensure that the component meets all applicable environmental compliance standards required for your specific manufacturing process and regional regulations before finalizing procurement.
Selection Notes
Select this component when a compact footprint is critical for portable or space-constrained designs. Evaluate the R_DS(ON) specifications at your intended operating gate-source voltages to ensure adequate efficiency. Confirm that the thermal performance under your specific PCB layout conditions supports the required continuous drain current without exceeding junction temperature limits.
Part Context
This part belongs to the DMP series of P-channel MOSFETs manufactured by Diodes Incorporated. These components are engineered to minimize on-state resistance while maintaining superior switching performance. The series targets applications requiring efficient power control in small form factors, utilizing advanced silicon technology for reliable operation across wide temperature ranges.
Replacement Considerations
For automotive applications requiring specific change control, refer to the related automotive grade parts with the 'Q-suffix'. Consult the official Diodes Incorporated automotive product listing for qualified alternatives that meet AEC-Q100/101/104/200 standards and PPAP requirements.
