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Product Detailed Parameters
- Description：MOSFET P-CH 30V 250MA SOT323
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：250mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：2.4Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.2 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：51.16 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：300mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-323
- Package / Case：SC-70, SOT-323
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Overview
The DMP32D4SW is a P-channel enhancement mode MOSFET designed for high-efficiency power management. It features a -30V drain-source voltage rating and low on-state resistance of 2.4Ω at VGS = -10V, or 4Ω at VGS = -4.5V. The device supports a continuous drain current of -250mA at +25°C and operates within a junction temperature range of -55°C to +150°C. Packaged in an SOT323 surface-mount format, it integrates ESD protection on the gate terminal.
Feature Summary
- Low on-resistance design minimizes conduction losses while maintaining superior switching performance.
- Gate terminal includes integrated electrostatic discharge (ESD) protection circuitry.
- Compliant with RoHS directives and manufactured as a halogen- and antimony-free green device.
Applications
- Load switches
- Portable applications
- Power management functions
Procurement Notes
Verify the specific ordering suffix against Diodes Incorporated documentation to confirm packaging quantity and reel size. Confirm that the selected variant meets the required JEDEC reliability standards for high-reliability applications. Ensure the final assembly process aligns with the specified moisture sensitivity level and thermal characteristics defined in the datasheet.
Selection Notes
Select this component when a compact P-channel switch is required for portable systems. The SOT323 package suits space-constrained designs. Evaluate the on-resistance requirements against the available gate drive voltages (-4.5V or -10V) to ensure adequate current handling capabilities for the intended load conditions.
Part Context
This part belongs to the DMP series of P-channel MOSFETs from Diodes Incorporated. These devices are engineered to balance low static resistance with fast dynamic switching speeds. The series targets consumer electronics and battery-powered equipment where efficiency and small footprint are critical design constraints.
Replacement Considerations
Consult official Diodes Incorporated cross-reference lists for verified substitutes. Verify pinout compatibility and electrical ratings before implementation.
FAQ
What is the maximum gate-source voltage rating?
The absolute maximum rating for gate-source voltage is ±20V.
Does the device include internal body diode protection?
Yes, the datasheet specifies forward transfer admittance and source-drain voltage characteristics, indicating an integrated body diode structure typical of MOSFETs.
