DMP32D5SFB-7B

$0.29

Description：MOSFET P-CH 30V 400MA 3DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:e43cb162869a Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 30V 400MA 3DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：400mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：2.4Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id：2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：4 nC @ 10 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：100 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：500mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：X1-DFN1006-3
Package / Case：3-UFDFN

Download product information

DMP32D5SFB-7B

Overview

The DMP32D5SFB is a 30V P-channel enhancement mode MOSFET designed for high-efficiency power management. It features low on-state resistance and superior switching performance. The device operates with a drain-source voltage of -30V and continuous drain currents up to -400mA at +25°C. On-resistance is specified as 2.4Ω at VGS = -10V and 4Ω at VGS = -4.5V. Packaged in an X1-DFN1006-3 case, it supports junction temperatures from -55°C to +150°C.

Feature Summary

Low on-resistance for high efficiency
Ultra-small surface mount package
ESD protected gate structure
Qualified to AEC-Q101 standards

Applications

Load Switch
Portable Applications
Power Management Functions

Procurement Notes

Verify the specific ordering suffix matches the required reel size and quantity per reel configuration. Confirm that the component meets all applicable environmental compliance requirements, including RoHS directives and halogen-free specifications, before finalizing procurement plans.

Selection Notes

Select this component when space constraints require an ultra-small surface mount package like the X1-DFN1006-3. Ensure the application current does not exceed the rated continuous drain current limits at the expected operating temperature. Verify that the gate drive voltage aligns with the specified thresholds for optimal on-resistance performance.

Part Context

This part belongs to Diodes Incorporated's portfolio of P-channel enhancement mode MOSFETs. It is engineered to minimize on-state resistance while maintaining fast switching speeds. The product line targets applications requiring compact footprints and reliable performance in portable electronic devices.

Replacement Considerations

Check datasheets for alternative parts offering compatible pinouts and similar electrical characteristics. Verify that any substitute maintains the required voltage ratings and thermal performance within the X1-DFN1006-3 or equivalent package dimensions.