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The DMP32D9UDAQ-7B is a dual p-channel enhancement mode MOSFET in an X2-DFN0806-6 package. It features a drain-source voltage of -30V and a maximum continuous drain current of -0.22A at +25°C. The on-resistance is 5Ω max at VGS = -4.5V, dropping to 10Ω max at VGS = -1.5V. Total gate charge is typically 0.35nC. Operating temperature ranges from -55°C to +150°C.
Verify the specific ordering suffix '-7B' corresponds to the 10,000-unit tape and reel packaging format. Confirm that the 'AQ' designation aligns with the required automotive quality specifications and IATF 16949 manufacturing certification. Ensure component authenticity through authorized distribution channels to guarantee compliance with RoHS and halogen-free requirements.
Select this component for applications requiring compact dual-switching solutions within tight space constraints. The ultra-small surface mount package facilitates high-density board layouts. Evaluate the on-resistance characteristics against specific load currents to ensure efficient power handling. Consider the low gate charge for minimizing drive power requirements in battery-operated systems.
This device belongs to Diodes Incorporated's portfolio of dual p-channel enhancement mode MOSFETs. It utilizes the X2-DFN0806-6 case style, providing a highly compact footprint. The product line emphasizes low on-resistance and superior switching performance for modern power management needs.
Consult official documentation for verified substitute part numbers before implementation.
The maximum continuous drain current is -0.22A at an ambient temperature of +25°C.
Yes, the DMP32D9UDAQ is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.
The typical total gate charge is 0.35nC when tested at VGS = -4.5V and VDS = -15V.