DMP4009SSSQ-13

$0.38

Description：MOSFET BVDSS: 31V~40V SO-8 T&R 2
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:e77b1a1f85d2 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 31V~40V SO-8 T&R 2
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：11mOhm @ 9.8A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：112 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：5697 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：1.5W
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：8-SO
Package / Case：8-SOIC (0.154", 3.90mm Width)

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DMP4009SSSQ-13

Overview

The DMP4009SSSQ-13 is a single-channel P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -40V drain-source voltage rating and a maximum continuous drain current of -10A at +25°C. The device achieves a low on-state resistance of 11mΩ at VGS = -10V and 19mΩ at VGS = -4.5V. Packaged in an SO-8 surface-mount format, it supports a total power dissipation of 1.5W to 2.1W depending on mounting conditions. The component operates within a temperature range of -55°C to +150°C.

Feature Summary

Designed for high-efficiency power management with minimized on-state resistance while maintaining superior switching performance.
Qualified for automotive applications requiring specific change control, meeting AEC-Q101 standards and PPAP capability.
Manufactured in IATF16949 certified facilities with 100% Unclamped Inductive Switch (UIS) testing in production.

Applications

DC-DC converters
Power-management functions
Analog switches

Procurement Notes

Verify the complete part number including the suffix to confirm packaging specifications. Confirm that the intended application environment aligns with the specified operating temperature range and thermal characteristics. Ensure design compliance with AEC-Q101 requirements if used in automotive contexts. Validate gate drive voltages against the absolute maximum ratings to prevent damage.

Selection Notes

Select this component for designs requiring a -40V P-channel MOSFET with low conduction losses. Consider the SO-8 package constraints for thermal management when calculating power dissipation limits. Evaluate the gate threshold voltage characteristics to ensure compatibility with the driving logic levels. Review the safe operation area curves to verify suitability for pulsed current applications.

Part Context

This component belongs to the DMP series of P-channel MOSFETs from Diodes Incorporated. It utilizes silicon technology and is housed in a standard SO-8 plastic package. The product line emphasizes low RDS(ON) values suitable for modern compact power electronics. It represents a generation of devices optimized for balancing conduction efficiency with switching speed.

Replacement Considerations

Consult official manufacturer documentation for verified cross-reference data. No public substitute part numbers are confirmed in the provided source material.

FAQ

Is the DMP4009SSSQ-13 suitable for automotive applications?

Yes, the device is AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities, making it suitable for automotive applications requiring specific change control.