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The DMP4010SK3Q-13 is a P-channel enhancement mode MOSFET designed for automotive applications. It features a -40V drain-source voltage and a continuous drain current of -50A at +25°C case temperature. The device exhibits a maximum on-resistance of 9.9mΩ at VGS=-10V and 14mΩ at VGS=-4.5V. It operates within a junction temperature range of -55°C to +150°C, supports pulsed currents up to -100A, and includes avalanche energy ratings of 260mJ.
Verify the specific ordering suffix matches the required packing quantity and carrier type. Confirm that the component meets all applicable RoHS directives and environmental compliance requirements for your region. Ensure the selected package variant aligns with your PCB footprint specifications and thermal management design constraints before finalizing procurement.
Select this component when designing circuits requiring robust P-channel switching capabilities under strict automotive reliability standards. Consider the low on-resistance characteristics for efficient power handling and the wide operating temperature range suitable for demanding environments. Evaluate the thermal resistance values against your system's heat dissipation requirements to ensure stable operation.
This part belongs to the DMP4010 series from Diodes Incorporated, specifically engineered for high-reliability automotive electronics. It utilizes a TO252 (DPAK) surface-mount package to provide effective thermal performance and mechanical stability. The series is characterized by its compliance with stringent industry quality certifications and advanced silicon technology.
Consult official manufacturer documentation for verified substitute part numbers. Cross-reference electrical parameters such as breakdown voltage, on-resistance, and package dimensions to ensure compatibility. Verify that any alternative component maintains the same automotive qualification status and manufacturing facility certifications.
Yes, it is qualified to AEC-Q101 standards and manufactured in IATF 16949 certified facilities.
The device supports a pulsed drain current of -100A with a 10µs pulse duration and 1% duty cycle.