DMP4011SPS-13

$0.53

Description：MOSFET P-CH 40V PWRDI5060
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:96dc156712bd Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 40V PWRDI5060
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：11.7A (Ta), 76A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：11mOhm @ 9.8A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：52 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2747 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：1.3W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8
Package / Case：8-PowerTDFN

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DMP4011SPS-13

Overview

The DMP4011SPS-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated, housed in a PowerDI5060-8 surface-mount package. It features a drain-source voltage (V_DSS) of -40 V and a maximum continuous drain current (I_D) of -76 A at case temperature +25°C. The device exhibits a static drain-source on-resistance (R_DS(ON)) of 10 mΩ max at V_GS = -10 V and 14 mΩ max at V_GS = -4.5 V. Operating temperatures range from -55°C to +150°C.

Feature Summary

Designed for high-efficiency power management applications with minimized on-state resistance and superior switching performance.
Qualified to AEC-Q101 standards for automotive reliability requirements.
Includes 100% unclamped inductive switch (UIS) testing during production.

Applications

DC-DC Converters
Power Management Functions
Analog Switch

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2500-unit tape and reel packaging configuration. Confirm compliance with RoHS directives and halogen-free status as defined by the manufacturer's green product guidelines. Ensure the application environment remains within the specified thermal and electrical limits outlined in the datasheet.

Selection Notes

Select this component when a low-profile P-channel MOSFET with high current capability is required. The PowerDI5060-8 package offers improved thermal dissipation compared to smaller footprints. Consider the gate threshold voltage characteristics for compatibility with standard logic-level drivers in power management circuits.

Part Context

This part belongs to the DMP4011 series of P-channel MOSFETs from Diodes Incorporated. It utilizes silicon technology and is designed to balance low conduction losses with fast switching speeds. The device is intended for use in compact electronic designs requiring robust power handling capabilities.

Replacement Considerations

The automotive-compliant variant DMP4011SPSQ is available under a separate datasheet. Verify pinout and thermal characteristics before substituting with other P-channel MOSFETs in the same voltage class.