DMP4011SPSW-13

$0.48

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:c79ad397cfe5 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：11.7A (Ta), 76A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：10mOhm @ 9.8A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：52 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2747 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：1.3W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

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DMP4011SPSW-13

Overview

The DMP4011SPSW-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated, housed in a PowerDI5060-8 package. It features a drain-source voltage (BVDSS) of -40V and a maximum on-resistance (RDS(ON)) of 10mΩ at VGS = -10V and 14mΩ at VGS = -4.5V. The device supports a continuous drain current of -76A at TC = +25°C and -11.7A at TA = +25°C. Total gate charge is typically 25nC at VGS = -4.5V and 52nC at VGS = -10V. Operating temperature ranges from -55°C to +150°C.

Feature Summary

100% Unclamped Inductive Switch (UIS) tested in production for reliability
Low on-resistance with fast switching speed performance
Qualified to JEDEC standards for high reliability applications

Applications

DC-DC converters
Power-management functions
Analog switches

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packing quantity of 2,500 units as documented in the official datasheet. Confirm that the required package variant matches the PowerDI5060-8/SWP (Type UX) specifications provided in the mechanical data section. Ensure compliance with RoHS and Halogen-free requirements if applicable to the design constraints.

Selection Notes

Select this component when a low-profile surface-mount P-channel MOSFET is required for high-efficiency power management. The device offers superior switching performance combined with minimized on-state resistance. Consider the thermal characteristics and junction-to-case resistance when designing heat dissipation strategies for the intended application environment.

Part Context

This part belongs to the DMP4011 series of P-channel enhancement mode MOSFETs designed by Diodes Incorporated. It utilizes the PowerDI®5060-8 package, which provides a compact form factor suitable for space-constrained designs. The series is engineered to balance low conduction losses with robust switching capabilities for modern electronic systems.

Replacement Considerations

The automotive-compliant version DMP4011SPSWQ is available under a separate datasheet. Verify pinout compatibility and electrical parameter alignment before substituting with other P-channel MOSFETs in the same voltage and current class.