DMP4013LFG-7

$0.82

Description：MOSFET P-CH 40V 10.3A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:434fd74668e3 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 40V 10.3A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：10.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：13mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：68.6 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3426 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

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DMP4013LFG-7

Overview

The DMP4013LFG-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -40V drain-source voltage rating and a maximum on-resistance of 13mΩ at VGS = -10V. The device supports a continuous drain current of -10.3A at +25°C ambient temperature, increasing to -13.7A for short pulses. It utilizes the POWERDI®3333-8 surface-mount package, which provides thermal efficiency in a compact form factor. Key electrical parameters include a gate threshold voltage of -1V to -3V and a total gate charge of 68.6nC at VGS = -10V.

Feature Summary

Low on-state resistance minimizes power losses during conduction.
Compact POWERDI®3333-8 package occupies significantly less board area than SO-8 packages.
Thermally efficient design enables higher density end products.
Qualified to AEC-Q101 standards for high reliability.

Applications

Backlighting
Power Management Functions
DC-DC Converters

Procurement Notes

Verify that the ordering suffix '-7' corresponds to the 2,000-unit tape and reel packaging configuration specified in the datasheet. Confirm compliance with RoHS directives and ensure the component meets the required automotive reliability standards if applicable to the target application environment.

Selection Notes

Select this component when a low-profile P-channel MOSFET is required for space-constrained designs. Ensure the operating voltage does not exceed the -40V drain-source limit. Verify that the drive voltage aligns with the specified RDS(ON) thresholds for optimal performance.

Part Context

This part belongs to the DMP4013 series from Diodes Incorporated. It is designed as a lead-free, halogen-free 'Green' device suitable for modern electronics manufacturing. The POWERDI®3333-8 case material is a molded plastic compound with a UL flammability classification rating of 94V-0.