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The DMP4013SPSW-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated, housed in a PowerDI5060-8 package. It features a drain-source voltage (BVDSS) of -40V and a maximum on-resistance (RDS(ON)) of 15mΩ at VGS = -10V and ID = -10A. The device supports a continuous drain current of -61A at TC = +25°C and -49A at TC = +70°C. Total gate charge is 67nC at VGS = -10V. Operating temperature ranges from -55°C to +150°C.
Verify the specific ordering suffix '-13' corresponds to the Tape & Reel carrier configuration containing 2500 units per reel. Confirm that the required package variant matches the PowerDI5060-8/SWP (Type UX) mechanical dimensions provided in the datasheet. Ensure design compatibility with the specified thermal resistance values under intended mounting conditions.
Select this component when a P-channel MOSFET with a -40V rating and low RDS(ON) is required for compact designs. The PowerDI5060-8 package offers a balance of thermal dissipation and footprint size. Consider the -61A continuous current capability at case temperature for high-load scenarios requiring efficient heat transfer through the exposed drain pad.
This part belongs to the DMP4013SPSW series of P-channel enhancement mode MOSFETs. It is distinct from automotive-compliant variants such as the DMP4013SPSWQ, which carries separate qualification documentation. The standard version focuses on general-purpose high-reliability industrial and consumer electronics applications.
For automotive-grade requirements, consider the DMP4013SPSWQ. Verify pinout compatibility and thermal characteristics against alternative packages like TO-252 or SOIC-8 if space constraints differ. Ensure replacement parts meet the same -40V BVDSS and UIS testing specifications.