DMP4015SPSQ-13

$0.58

Description：MOSFET P-CH 40V 8.5A PWRDI5060-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:6df42976fbf5 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 40V 8.5A PWRDI5060-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：8.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：11mOhm @ 9.8A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：47.5 nC @ 5 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：4234 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：1.3W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8
Package / Case：8-PowerTDFN

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DMP4015SPSQ-13

Overview

The DMP4015SPSQ-13 is a P-channel enhancement mode MOSFET in a PowerDI5060-8 package. It features a -40V drain-source voltage rating and low on-resistance of 11mΩ at VGS=-10V. The device supports continuous drain currents up to -11A at +25°C with thermal biasing. It operates within a junction temperature range of -55°C to +150°C and includes a total gate charge of 47.5nC.

Feature Summary

Qualified for automotive applications under AEC-Q101 standards with PPAP capability.
Demonstrates robust avalanche energy handling verified through 100% unclamped inductive switching testing.
Constructed using lead-free, halogen-free, and antimony-free materials.

Applications

DC-DC converters
Power-management functions
Analog switches

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2,500-unit reel packaging configuration. Confirm that the component meets RoHS 3 directives and IATF 16949 manufacturing facility requirements for intended automotive deployment.

Selection Notes

Select this component when designing circuits requiring a single P-channel switch for battery reverse protection or load management. Ensure the PCB layout accommodates the exposed drain pad for optimal thermal dissipation given the 1.6°C/W junction-to-case resistance.

Part Context

This part belongs to the DMP4015SPS series of automotive-grade power MOSFETs. It utilizes Diodes Incorporated's proprietary PowerDI5060-8 surface-mount technology to provide high current density in a compact footprint suitable for dense electronic control unit designs.