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Product Detailed Parameters
- Description：MOSFET BVDSS: 31V~40V TO252 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：11mOhm @ 9.8A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：112 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：5697 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：4W (Ta), 113W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252 (DPAK)
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The DMP4016SK3-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a TO252 (DPAK) package with a drain-source voltage rating of -40V and a continuous drain current of -75A at +25°C case temperature. The device exhibits a maximum on-resistance of 11mΩ at VGS = -10V and 15mΩ at VGS = -4.5V. Total gate charge is 112nC at VGS = -10V, supporting fast switching performance.
Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management.
- Manufactured using silicon technology with a lead-free finish that is RoHS compliant and halogen/antimony free.
- Includes 100% Unclamped Inductive Switch (UIS) testing during production to ensure reliability.
Applications
- DC-DC converters
- Power-management functions
- Analog switches
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel carrier configuration. Confirm the component meets required automotive standards if applicable, as standard versions differ from AEC-Q100 qualified parts. Ensure the design accommodates the specified thermal resistance values for the intended operating environment.
Selection Notes
Select this component for applications requiring low conduction losses in a surface-mount TO252 package. Evaluate the thermal dissipation capabilities against the total power dissipation limits at both ambient and case temperatures. Consider the gate threshold voltage range when designing the drive circuitry for optimal switching efficiency.
Part Context
This part belongs to the DMP4016SK3 series of P-channel MOSFETs from Diodes Incorporated. It utilizes a molded plastic 'Green' compound with a UL flammability classification rating of 94V-0. The terminals feature a matte tin finish annealed over a copper leadframe, ensuring solderability per MIL-STD-202 Method 208.
Replacement Considerations
Consult official Diodes Incorporated documentation for verified substitute part numbers. Do not assume cross-compatibility based solely on package type or voltage ratings without verifying electrical parameters such as RDS(ON) and current handling capabilities.
