DMP4016SPSW-13

$0.36

Description：MOSFET BVDSS: 31V~40V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:22eb10ee603b Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 31V~40V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：86A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：10mOhm @ 9.8A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：112 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：5697 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：3.9W (Ta), 119W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

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DMP4016SPSW-13

Overview

The DMP4016SPSW-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -40V drain-source voltage rating and a maximum on-resistance of 10mΩ at VGS = -10V, supporting up to -86A continuous drain current. The device utilizes a PowerDI5060-8 package with wettable flank terminals for improved optical inspection. Key electrical parameters include a gate threshold voltage range of -1.5V to -2.5V, total gate charge of 112nC at VGS = -10V, and a junction temperature operating range from -55°C to +150°C.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management.
Features wettable flank terminals to facilitate improved optical inspections during manufacturing.
Includes 100% Unclamped Inductive Switch (UIS) testing in production to ensure reliability.

Applications

DC-DC converters
Power-management functions
Analog switches

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packing quantity of 2,500 units as defined in the manufacturer's documentation. Confirm that the component meets RoHS compliance standards and Halogen/Antimony-free requirements if required by your assembly specifications. Ensure the PowerDI5060-8/SWP footprint matches your PCB layout design before finalizing procurement.

Selection Notes

Select this component when a low on-resistance P-channel MOSFET is required for high-current applications within a 40V system. The PowerDI5060-8 package offers a compact form factor suitable for space-constrained designs. Consider the thermal resistance characteristics and the need for wettable flank visibility if automated optical inspection is part of your quality control process.

Part Context

This component belongs to the DMP40 series of P-channel MOSFETs from Diodes Incorporated. It is engineered for modern power management solutions requiring high efficiency. The device integrates advanced silicon technology to achieve low conduction losses without compromising switching speed, making it a specialized choice for dense electronic assemblies.

Replacement Considerations

Consult official Diodes Incorporated substitution guides or datasheets for verified equivalent part numbers. Do not assume cross-compatibility with other manufacturers' devices based solely on similar voltage or current ratings without verifying pinout and thermal specifications.