DMP4016SSS-13

$0.36

Description：MOSFET BVDSS: 31V~40V SO-8 T&R 2
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:a0d8ba4a9782 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 31V~40V SO-8 T&R 2
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：10.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：11mOhm @ 9.8A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：112 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：5697 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：1.6W
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SO
Package / Case：8-SOIC (0.154", 3.90mm Width)

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DMP4016SSS-13

Overview

The DMP4016SSS-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -40V drain-source breakdown voltage and a maximum on-resistance of 11mΩ at VGS=-10V. The device supports a continuous drain current of -10.8A at +25°C and handles pulsed currents up to -112A. Packaged in an SO-8 surface-mount format, it operates within a temperature range of -55°C to +150°C.

Feature Summary

Designed for high-efficiency power management with minimized on-state resistance while maintaining superior switching performance.
Manufactured using totally lead-free materials that are fully RoHS compliant and free from halogens and antimony.
Verified for reliability through 100% Unclamped Inductive Switch (UIS) testing during production.

Applications

DC-DC converters
Power-management functions
Analog switches

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packaging configuration containing 2,500 units per carrier. Confirm compliance requirements such as RoHS 3 and REACH status against the latest manufacturer documentation before finalizing component selection for your design.

Selection Notes

Evaluate thermal constraints carefully, as the SO-8 package has a junction-to-ambient thermal resistance of 80.2°C/W on standard FR-4 boards. Ensure gate drive voltages remain within the ±20V limit and consider the low input capacitance characteristics for high-frequency switching applications requiring fast turn-on and turn-off times.

Part Context

This component belongs to the DMP4016SSS series of P-channel MOSFETs designed by Diodes Incorporated. The series utilizes silicon technology to provide robust performance in compact surface-mount packages suitable for modern electronic designs requiring efficient power control solutions.

Replacement Considerations

Consult official datasheets for cross-referencing. Verify pinout compatibility and electrical parameters match exactly when substituting components in existing circuit layouts.