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Product Detailed Parameters
- Description：MOSFET P-CH 40V 6.7A TO252
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：6.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：25mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id：1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：33.7 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1643 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：1.7W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252-3
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The DMP4025LK3-13 is a P-channel enhancement mode MOSFET from Diodes Incorporated, housed in a TO252 (DPAK) surface-mount package. It features a drain-source voltage rating of -40V and a continuous drain current of -8.6A at +25°C. The device offers a maximum on-resistance of 25mΩ at VGS = -10V and 45mΩ at VGS = -4.5V. Designed for high efficiency power management, it provides low input/output leakage and fast switching speeds. The component is lead-free, RoHS compliant, and manufactured using a green molding compound.
Feature Summary
- Low on-state resistance to minimize conduction losses
- Fast switching speed for efficient power management
- Low input and output leakage currents
- Qualified to JEDEC standards for high reliability
Applications
- Motor controls
- Backlighting
- DC-DC converters
- Printer equipment
Procurement Notes
Verify the specific part number against official manufacturer documentation before procurement. Confirm that the TO252 package dimensions and marking codes match the required design specifications. Ensure compliance with applicable environmental directives such as RoHS and REACH. Check for any updates regarding product status or recommended alternatives if the component is marked as not recommended for new designs.
Selection Notes
Select this component for applications requiring a P-channel MOSFET with a -40V breakdown voltage and moderate current handling capabilities. Consider the thermal resistance values when designing heat dissipation strategies for the TO252 package. Evaluate the gate charge characteristics to ensure compatibility with the driving circuit's switching frequency requirements. Verify that the operating temperature range meets the environmental conditions of the intended application.
Part Context
This part belongs to the DMP4025 series of P-channel MOSFETs designed by Diodes Incorporated. The series focuses on minimizing on-state resistance while maintaining superior switching performance. The DMP4025LK3 variant specifically utilizes a TO252 package, distinguishing it from other package options within the same electrical family. It is engineered for high-efficiency power management tasks.
Replacement Considerations
An automotive-compliant version of this component is available under the separate datasheet designation DMP4025LK3Q. Designers should consult the specific automotive datasheet if AEC-Q qualification is required for their application.
