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Product Detailed Parameters
- Description：MOSFET BVDSS: 31V~40V TO252 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：6.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：25mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id：1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：33.7 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1643 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：1.7W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252 (DPAK)
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The DMP4025LK3Q-13 is a P-channel enhancement mode MOSFET designed for automotive applications. It features a -40V drain-source voltage and an on-resistance of 25mΩ at VGS=-10V and 45mΩ at VGS=-4.5V. The device supports continuous drain currents of -8.6A at +25°C and -6.7A at +70°C, with a maximum power dissipation of 1.7W in still air. It operates within a junction temperature range of -55°C to +150°C and is qualified to AEC-Q101 standards.
Feature Summary
- Qualified to AEC-Q101 standards with PPAP capability for automotive use
- Low on-resistance for efficient power switching
- Fast switching speed characteristics
- Lead-free finish compliant with RoHS directives
Applications
- Motor control systems
- Backlighting circuits
- DC-DC converters
- Printer equipment
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packaging configuration containing 2,500 units per carrier. Confirm that the component meets the required IATF 16949 manufacturing facility standards for automotive change control requirements. Ensure compatibility with the specified TO252 (DPAK) surface mount package dimensions during PCB layout.
Selection Notes
Select this component for designs requiring robust automotive-grade reliability and low conduction losses. Evaluate thermal management strategies based on the 1.7W power dissipation limit in still air conditions. Consider the gate threshold voltage variations across temperature ranges when designing drive circuits to ensure reliable switching performance under varying load conditions.
Part Context
This part belongs to the DMP4025L series of P-channel MOSFETs manufactured by Diodes Incorporated. It utilizes a TO252 (DPAK) surface-mount package suitable for automated assembly processes. The device is specifically engineered to meet stringent automotive industry standards, ensuring durability and consistent performance in demanding electronic environments.
Replacement Considerations
Direct substitutes include other AEC-Q101 qualified P-channel MOSFETs from Diodes Incorporated within the same voltage and current ratings. Verify pinout compatibility and thermal resistance values before implementation. Cross-reference datasheets to confirm matching electrical parameters and package dimensions.
