DMP4026SFG-7

$0.23

Description：MOSFET BVDSS: 31V~40V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:916ff8875bb8 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 31V~40V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：25mOhm @ 3A, 10V
Vgs(th) (Max) @ Id：1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：48 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2275 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：2.6W (Ta), 33W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

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DMP4026SFG-7

Overview

The DMP4026SFG-7 is a P-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 surface-mount package. It features a drain-source voltage rating of -40V and a maximum continuous drain current of -28A at +25°C case temperature. The device exhibits a static drain-source on-resistance (RDS(ON)) of 25mΩ at VGS = -10V and 45mΩ at VGS = -4.5V. Total gate charge is 48nC at VGS = -10V. Thermal resistance from junction to ambient is 48°C/W, with an operating temperature range of -55°C to +150°C.

Feature Summary

Low RDS(ON) minimizes conduction losses for high-efficiency power management.
Fast switching speed reduces switching losses during operation.
100% Unclamped Inductive Switch (UIS) tested in production.

Applications

Motor controls
Backlighting
DC-DC converters
Printer equipment

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 2,000-unit reel packaging configuration as defined in the manufacturer's documentation. Confirm that the component meets RoHS 2 and RoHS 3 directives if environmental compliance is required for the target assembly process. Ensure the selected variant matches the exact electrical parameters listed in the official datasheet DS44884.

Selection Notes

Select this component when designing circuits requiring a compact P-channel MOSFET with low on-resistance in a small footprint. Consider the thermal characteristics and power dissipation limits relative to the expected load current and ambient conditions. Evaluate the gate threshold voltage requirements against the available drive voltage levels to ensure reliable switching performance within the specified operational temperature range.

Part Context

This part belongs to the DMP40 series of P-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. These devices are engineered to balance low on-state resistance with superior switching capabilities. The series utilizes silicon technology and is designed for applications demanding efficient power management in space-constrained environments.

Replacement Considerations

Consult the manufacturer's official documentation for verified substitute part numbers. Cross-reference electrical parameters such as voltage ratings, current capacity, and package dimensions to ensure compatibility with existing circuit designs before implementing any alternative components.