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Product Detailed Parameters
- Description：MOSFET BVDSS: 31V~40V POWERDI333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：8.9A (Ta), 49A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：25mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id：1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：45.8 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2064 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：1.6W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI3333-8 (SWP) Type UX
- Package / Case：8-PowerVDFN
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Overview
The DMP4026SFVWQ is a P-channel enhancement mode MOSFET designed for automotive applications. It features a -40V drain-source voltage and a maximum continuous drain current of -49A at TC = +25°C. The device offers a low on-resistance of 25mΩ at VGS = -10V and 45mΩ at VGS = -4.5V. Packaged in a PowerDI3333-8, it supports an operating temperature range from -55°C to +150°C.
Feature Summary
- Qualified to AEC-Q101 standards with PPAP capability for automotive use
- PowerDI3333-8 package occupies 33% less board area than SO-8 equivalents
- 100% unclamped inductive switching (UIS) tested in production
Applications
- Reverse-polarity protections
- Power-management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the required tape and reel packing quantity of 3000 units. Confirm that the component meets all necessary IATF 16949 manufacturing facility requirements for your intended automotive application context.
Selection Notes
Select this component when space-constrained automotive designs require high-density power switching. Evaluate thermal resistance values based on whether the device will be mounted on standard FR-4 substrates or optimized copper heat sinks to ensure safe operation within the specified junction temperature limits.
Part Context
This part belongs to Diodes Incorporated's automotive-grade MOSFET portfolio. It utilizes the PowerDI3333-8 surface-mount technology package. The device is manufactured in IATF 16949 certified facilities to support strict automotive quality control standards.
Replacement Considerations
Consult official manufacturer cross-reference documentation for verified equivalent parts. Do not substitute without confirming matching electrical ratings and package dimensions.
