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The DMP4047SSDQ-13 is a dual P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -40V drain-source breakdown voltage and a maximum continuous drain current of -6.5A at +25°C. The device exhibits a low on-resistance of 45mΩ at VGS = -10V and 55mΩ at VGS = -4.5V. Packaged in an SO-8 surface-mount format, it supports a junction temperature range from -55°C to +150°C with a total power dissipation of 1.8W under specific thermal conditions.
Verify the Q-suffix indicates automotive compliance distinct from the standard commercial version. Confirm package type matches SO-8 requirements. Ensure sourcing channels are authorized to prevent counterfeit components. Check datasheet revision for updated electrical characteristics before finalizing designs.
Select this component for applications requiring dual P-channel control within a compact SO-8 footprint. Evaluate thermal resistance values against expected ambient temperatures. Consider gate threshold voltage specifications for logic compatibility. Verify that the -40V rating exceeds peak circuit voltages to ensure safe operation margins.
This part belongs to the DMP4047 series of dual P-channel MOSFETs. It shares the same core silicon die as the DMP4047SSD-13 but includes the Q-suffix denoting automotive-grade qualification. Both variants utilize identical pinouts and mechanical dimensions for interchangeability in non-automotive contexts.
The DMP4047SSD-13 serves as the direct commercial equivalent. Verify that the target application does not require AEC-Q100 certification or IATF 16949 manufacturing processes when substituting the standard version.