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Product Detailed Parameters
- Description：MOSFET 2P-CH 40V 4A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：4A
- Rds On (Max) @ Id, Vgs：50mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：13.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：674pF @ 20V
- Power - Max：1.8W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
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Overview
The DMP4050SSD-13 is a dual P-channel enhancement mode MOSFET in an SO-8 package. It features a -40V drain-source voltage and a continuous drain current of -5.2A at +25°C, dropping to -4.0A with linear derating. The on-resistance is 50mΩ at VGS=-10V and 79mΩ at VGS=-4.5V. Gate-source voltage is ±20V, with a threshold voltage max of -3.0V. Total gate charge is 13.9nC at VGS=-10V. Power dissipation is 1.25W, operating temperature ranges from -55°C to +150°C.
Feature Summary
- Dual P-channel configuration for high-efficiency power management
- Low on-state resistance optimized for switching performance
- Qualified to AEC-Q101 standards for automotive reliability
- Totally lead-free and fully RoHS compliant
Applications
- Motor Control
- Backlighting
- DC-DC Converters
- Power Management Functions
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the standard SO-8 tape and reel packaging containing 2500 units per reel. Confirm that the 'Standard' qualification level meets project requirements, distinct from the 'Automotive' qualified DMP4050SSDQ-13 variant. Ensure compliance with J-STD-020 moisture sensitivity level 1 during storage and handling procedures.
Selection Notes
Select this component for applications requiring dual P-channel switching within a compact SO-8 footprint. The device supports logic-level drive with low on-resistance at both -10V and -4.5V gate voltages. Consider thermal derating curves when designing for ambient temperatures above +25°C or when utilizing both channels simultaneously to maintain junction temperature limits.
Part Context
This part belongs to the DMP40 series of dual P-channel MOSFETs manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in a molded plastic SO-8 case with matte tin terminals. The product line emphasizes green manufacturing standards, being halogen and antimony free while maintaining UL flammability classification rating 94V-0.
Replacement Considerations
The DMP4050SSDQ-13 is the automotive-qualified equivalent with identical electrical specifications but higher reliability standards. Verify pinout compatibility and thermal characteristics before substituting with other dual P-channel MOSFETs in the SO-8 package.
FAQ
What is the maximum gate-source voltage allowed?
The absolute maximum rating for gate-source voltage is ±20V.
How does the continuous drain current change with temperature?
At +25°C, the current is -5.2A. With linear derating starting at +25°C, it drops to -4.0A at higher temperatures.
Is this device suitable for automotive applications?
Yes, it is qualified to AEC-Q101 standards for high reliability, though the DMP4050SSDQ-13 is specifically designated as the automotive version.
