DMP4051LK3-13

$0.60

Description：MOSFET P-CH 40V 7.2A TO252-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:5e3c43902bac Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 40V 7.2A TO252-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：7.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：51mOhm @ 12A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：14 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：674 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：2.14W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252-3
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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DMP4051LK3-13

Overview

The DMP4051LK3-13 is a P-channel enhancement mode MOSFET designed for high-efficiency power management. It features a -40V drain-source voltage rating and a maximum on-resistance of 51mΩ at VGS = -10V, supporting a continuous drain current of -10.5A. The device utilizes a TO252 (DPAK) surface-mount package with a lead-free finish. Key electrical parameters include a gate threshold voltage ranging from -1.0V to -3.0V and a total gate charge of 14nC. Thermal characteristics specify a power dissipation of 8.9W and a junction-to-ambient thermal resistance of 14.0°C/W under standard PCB mounting conditions.

Feature Summary

Engineered to minimize on-state resistance while maintaining superior switching performance.
Verified for 100% Unclamped Inductive Switch (UIS) testing in production environments.

Applications

Backlighting circuits
DC-DC converters
Power-management functions

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packaging configuration containing 2,500 units per reel. Confirm that the component meets RoHS compliance standards and is manufactured as a Halogen- and Antimony-free 'Green' device. Ensure the procurement channel provides official Diodes Incorporated documentation to validate the part status and manufacturing origin.

Selection Notes

Select this component when a P-channel MOSFET with a -40V breakdown voltage and low on-resistance is required for compact designs. The TO252 package offers a balance between thermal dissipation capabilities and board space efficiency. Evaluate the 14nC gate charge against driver capabilities to ensure adequate switching speeds are achieved without excessive drive losses.

Part Context

This component belongs to the DMP series of P-channel enhancement mode MOSFETs produced by Diodes Incorporated. The series focuses on providing optimized trade-offs between conduction losses and switching dynamics. The DMP4051LK3 variant specifically targets applications requiring robust avalanche energy handling and reliable operation within standard industrial temperature ranges.

Replacement Considerations

Consult the manufacturer's official cross-reference documentation for verified substitute part numbers. Do not assume functional equivalence based solely on matching voltage or current ratings without verifying pinout compatibility and thermal resistance specifications.

FAQ

Is the DMP4051LK3 qualified for automotive applications?

For automotive applications requiring AEC-Q100/101/104/200 qualification and IATF 16949 certified manufacturing, contact Diodes Incorporated directly or your local representative.