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Product Detailed Parameters
- Description：MOSFET P-CH 450V 600MA SOT223
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：450 V
- Current - Continuous Drain (Id) @ 25°C：600mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：21Ohm @ 300mA, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：4.2 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：1003 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：12.5W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-223-3
- Package / Case：TO-261-4, TO-261AA
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Overview
The DMP45H21DHE-13 is a 450V P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of -450V and a continuous drain current (ID) of -0.27A at +25°C. The static drain-source on-resistance (RDS(ON)) is typically 13Ω with a maximum of 21Ω at VGS = -10V. The device operates within a junction temperature range of -55°C to +150°C, has a total power dissipation of 2.4W at +25°C, and utilizes an SOT223 package.
Feature Summary
- Provides efficient power handling capability with high impedance characteristics
- Eliminates thermal runaway and thermally induced secondary breakdown risks
- Designed for low gate drive requirements and fast switching speeds
- Features low input capacitance to support high-voltage switching applications
Applications
- Load switching circuits
- Uninterrupted power supplies (UPS)
- Telecom high-voltage switching systems
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the tape and reel packaging configuration containing 2,500 units per carrier. Confirm that the component meets RoHS 3 compliance standards and is halogen-free. Ensure the procurement channel is authorized to guarantee adherence to standard terms and conditions.
Selection Notes
Select this component for high-voltage DC-DC converter designs requiring robust avalanche energy handling capabilities up to 30mJ. Evaluate the thermal resistance parameters against the specific PCB copper pad layout requirements. Consider the gate threshold voltage specifications when designing the control logic interface for reliable turn-on and turn-off states.
Part Context
This part belongs to the DMP45H series of high-voltage P-channel MOSFETs from Diodes Incorporated. The series is engineered for telecom and general high-voltage switching environments. The device is housed in a lead-free SOT223 package with matte tin annealed terminals over a copper lead frame, ensuring compatibility with standard surface mount assembly processes.
Replacement Considerations
Direct substitutes include other Diodes Incorporated parts within the DMP45H family, such as the DMP45H21DHE without the suffix or the DMP45H4D9HK3. Verify pinout compatibility and electrical ratings before substitution.
FAQ
What is the maximum avalanche energy rating for this device?
The DMP45H21DHE supports an avalanche energy (EAS) rating of 30 mJ under test conditions utilizing a 60mH inductor.
How does the on-resistance vary with temperature?
The typical on-resistance increases as the junction temperature rises from -55°C to +150°C, following the positive temperature coefficient characteristic shown in the transfer characteristics graphs.
