DMP510DLQ-7

DMP510DLQ-7

$0.04
  • Description:MOSFET BVDSS: 41V~60V SOT23 T&R
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)

SKU:2dbfa0bb76df Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET BVDSS: 41V~60V SOT23 T&R
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):50 V
  • Current - Continuous Drain (Id) @ 25°C:196mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):5V
  • Rds On (Max) @ Id, Vgs:9.5Ohm @ 100mA, 5V
  • Vgs(th) (Max) @ Id:2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:0.5 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:40 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):520mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:SOT-23-3
  • Package / Case:TO-236-3, SC-59, SOT-23-3

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DMP510DLQ-7

Overview

The DMP510DLQ-7 is a P-channel enhancement mode MOSFET designed for automotive applications. It features a -50V drain-source breakdown voltage and a maximum on-resistance of 9.5Ω at VGS = -5V. The device supports a continuous drain current of -196mA at +25°C and operates within a junction temperature range of -55°C to +150°C. Packaged in an SOT-23 case, it meets AEC-Q101 qualification standards.

Feature Summary

  • Qualified to AEC-Q101 standards with PPAP capability for automotive use
  • Designed for low on-resistance and fast switching speed
  • Features low gate threshold voltage and low input/output leakage
  • Manufactured in IATF 16949 certified facilities

Applications

  • General purpose interfacing switch
  • Power management functions
  • Analog switch

Procurement Notes

Verify the specific ordering suffix (e.g., -7 or -13) against the required packaging quantity before procurement. Confirm that the component meets the necessary AEC-Q101 qualification requirements for your specific automotive application context. Ensure compatibility with the intended PCB pad layout for the SOT-23 package.

Selection Notes

Select this component when a small-signal P-channel MOSFET with automotive reliability is required. Consider the 9.5Ω on-resistance limit for low-current switching applications. Evaluate the thermal resistance characteristics if operating near the upper temperature limits. Verify that the -50V rating aligns with the system's maximum voltage constraints.

Part Context

This part belongs to the Diodes Incorporated DMP series of P-channel enhancement mode MOSFETs. It is specifically engineered to meet stringent automotive industry standards. The device utilizes a standard SOT-23 surface-mount package, making it suitable for space-constrained designs requiring high reliability and compliance with environmental directives.

Replacement Considerations

DMP510DLQ-13 is a parameter-equivalent alternative offering different tape and reel packaging quantities.

DMP510DLQ-7DMP510DLQ-7
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