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The DMP510DLW-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated in an SOT323 package. It features a drain-source breakdown voltage (BVDSS) of -50V and a maximum continuous drain current (ID) of -174mA at +25°C. The device exhibits a static drain-source on-resistance (RDS(ON)) of up to 10Ω at VGS = -5V. Total power dissipation reaches 320mW with a thermal resistance (RθJA) of 398°C/W under standard conditions. Operating and storage temperatures range from -55°C to +150°C.
Verify the ordering suffix '-7' corresponds to the 3000-unit tape and reel packaging configuration. Confirm that the component meets specific environmental requirements such as being halogen and antimony-free. Ensure the application design accounts for the specified thermal resistance values when mounted on FR-4 PCBs with minimum recommended pad layouts.
Select this component for applications requiring a compact SOT323 footprint with moderate voltage handling capabilities. Consider the 10Ω RDS(ON) limit when designing for low-current loads where power loss must be minimized. Evaluate the gate threshold voltage range (-0.8V to -2.0V) against the driving circuit logic levels to ensure reliable turn-on performance across the full operating temperature range.
This part belongs to the DMP510DLW series of P-channel enhancement mode MOSFETs. It is designed to minimize on-state resistance while maintaining superior switching performance. The product is intended for use in high-efficiency power management applications where small form factors are critical.
Consult official documentation for verified substitutes. No confirmed substitute part numbers are available in the provided source material.
The maximum continuous drain current is -174mA at an ambient temperature of +25°C.
For automotive applications requiring AEC-Q100/101/200 qualification and IATF 16949 manufacturing, customers must contact Diodes Incorporated or their local representative directly.