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Product Detailed Parameters
- Description：MOSFET 2P-CH 50V 0.16A SOT563
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：50V
- Current - Continuous Drain (Id) @ 25°C：160mA
- Rds On (Max) @ Id, Vgs：6Ohm @ 100mA, 4V
- Vgs(th) (Max) @ Id：1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.58nC @ 4V
- Input Capacitance (Ciss) (Max) @ Vds：50.54pF @ 25V
- Power - Max：400mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：-
- Qualification：-
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Overview
The DMP56D0UV-7 is a dual P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates two independent P-channel transistors within a single SOT-563 surface-mount package. The device features a drain-source voltage rating of -50V and a continuous drain current of -160mA at +25°C. The maximum on-resistance is specified as 6Ω at VGS = -4V with ID = -100mA, or 8Ω at VGS = -2.5V with ID = -120mA. Total power dissipation is rated at 400mW, supported by a thermal resistance (junction to ambient) of 313°C/W. Operating temperatures range from -55°C to +150°C.
Feature Summary
- Dual configuration integrating two isolated P-channel transistors in a compact SOT-563 package
- ESD protected gate structure for enhanced reliability
- Low input capacitance supporting fast switching performance
- Totally lead-free and fully RoHS compliant construction
Applications
- DC-DC converters
- Power management functions
- Battery operated systems
- Solid-state relays
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging quantity and carrier type. The standard tape and reel configuration typically contains 3000 units per carrier. Confirm that the component meets required environmental standards such as RoHS compliance and halogen-free specifications before finalizing procurement orders.
Selection Notes
Select this component when space constraints require dual P-channel functionality in a minimal footprint. The low on-resistance characteristics make it suitable for applications requiring efficient power handling within small form factors. Ensure the design accommodates the thermal limitations associated with the SOT-563 package and the specified junction-to-ambient thermal resistance values.
Part Context
This part belongs to the DMP56DUV series of dual P-channel enhancement mode MOSFETs produced by Diodes Incorporated. The series is engineered to minimize on-state resistance while maintaining superior switching performance. These devices are designed for high-efficiency power management applications where compact size and reliable operation are critical requirements.
Replacement Considerations
Consult official manufacturer documentation for confirmed substitute part numbers. Verify pinout compatibility, electrical ratings, and package dimensions before considering any alternative components.
FAQ
What is the maximum continuous drain current for the DMP56D0UV-7?
The maximum continuous drain current is -160mA at an ambient temperature of +25°C.
Does the DMP56D0UV-7 include ESD protection?
Yes, the device features an ESD protected gate structure.
What is the total power dissipation rating?
The total power dissipation is rated at 400mW at +25°C.
