DMP58D0LFB-7

$0.36

Description：MOSFET P-CH 50V 180MA 3DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:ddaf236c98a2 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 50V 180MA 3DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：50 V
Current - Continuous Drain (Id) @ 25°C：180mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 5V
Rds On (Max) @ Id, Vgs：8Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id：2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：27 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：470mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：X1-DFN1006-3
Package / Case：3-UFDFN

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DMP58D0LFB-7

Overview

The DMP58D0LFB-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 50V drain-source breakdown voltage and a continuous drain current of 180mA. The device exhibits a maximum on-resistance of 6 ohms and operates with a gate-source voltage range of ±20V. Packaged in an X1-DFN1006-3 surface-mount format, it supports a power dissipation of 470mW at ambient temperature. The component functions within a temperature range of -55°C to +150°C.

Feature Summary

Dual-gate structure integrated into a compact single package for space-constrained designs
Enhancement mode operation compatible with standard logic-level control signals
Surface-mount construction optimized for automated assembly processes

Applications

Battery protection circuits
Load switching applications
Power management modules

Procurement Notes

Verify the specific suffix designation against official manufacturer documentation to confirm exact electrical tolerances and packaging specifications. Ensure that the procurement channel provides valid traceability records. Cross-reference the part number with the latest datasheet revision to confirm compliance with current RoHS directives and material declarations before finalizing acquisition.

Selection Notes

Select this component when a dual P-channel configuration is required in a minimal footprint. Evaluate the 6-ohm on-resistance against the specific load current requirements to ensure thermal limits are not exceeded. Confirm that the 50V voltage rating provides adequate margin for the target application's supply rails.

Part Context

This device belongs to the DMP series of power MOSFETs from Diodes Incorporated. The series focuses on providing efficient switching solutions for portable and battery-powered electronics. The X1-DFN package family offers high thermal performance relative to its small physical dimensions, supporting modern miniaturization trends.