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Product Detailed Parameters
- Description：MOSFET 2P-CH 50V 0.22A SOT563
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：50V
- Current - Continuous Drain (Id) @ 25°C：220mA (Ta)
- Rds On (Max) @ Id, Vgs：8Ohm @ 100mA, 5V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：37pF @ 25V
- Power - Max：490mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMP58D1LVQ-13 is a dual P-channel enhancement mode MOSFET in an SOT563 package. It features a -50V drain-source voltage and a maximum on-resistance of 8Ω at VGS = -5V. The continuous drain current is -220mA at +25°C, with a total power dissipation of 0.49W. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- AEC-Q101 qualified for automotive applications
- Low on-resistance and low gate threshold voltage
- Fast switching speed with low input capacitance
- Totally lead-free and fully RoHS compliant
Applications
- General purpose interfacing switches
- Power management functions
- Analog switches
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit reel quantity as documented in the manufacturer's ordering information. Confirm that the component meets AEC-Q101 qualification requirements if intended for automotive use. Ensure compatibility with IATF 16949 certified manufacturing standards.
Selection Notes
Select this component for designs requiring a dual P-channel configuration in a compact SOT563 footprint. Evaluate the 8Ω maximum on-resistance against load requirements at -5V gate drive. Consider the -220mA continuous current limit and thermal resistance characteristics for appropriate heat dissipation strategies.
Part Context
This part belongs to Diodes Incorporated's BSS family of dual MOSFETs. It utilizes silicon technology and is housed in a molded plastic SOT563 package. The device is designed to meet stringent automotive application requirements while maintaining standard surface mount installation methods.
Replacement Considerations
Consult official substitution lists for verified equivalents. Cross-reference pinouts and electrical parameters carefully when considering alternative dual P-channel MOSFETs in similar packages.
FAQ
Is the DMP58D1LVQ-13 suitable for automotive applications?
Yes, it is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.
What is the maximum operating junction temperature?
The maximum operating junction temperature is +150°C.
Does the device support general purpose interfacing?
Yes, the datasheet explicitly lists general purpose interfacing switches as a primary application.
